Rotary Sputtering Target

Rotary Target Technical Specification – Semiconductor Grade‌ Material & Purity‌ Base Materials‌: Cu, Ta, Co, Ru, W, TiN, TaN (5N–6N purity: 99.999%–99.9999%) Impurity Limits‌: Oxygen: < 20 ppm Nitrogen: < 50 ppm Hydrogen: < 1 ppm Metallic contaminants (Fe, Ni, Cr): < 1 ppm each Verified via ICP-MS and inert gas fusion analysis per SEMI M11-12 Structural Design‌ Form‌: Cylindrical geometry, inner diameter 75–150 mm, length 300–1200 mm Backing‌: Oxygen-free copper (OFC) tube, diffusion-bonded via vacuum hot-pressing Bond Strength‌: > 30 MPa at 25°C; stable under thermal cycling (–40°C to 300°C) Surface Finish‌: Ra ≤ 0.2 μm; no microcracks, inclusions, or porosity (verified by SEM/EDS)